 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| TetraFET D2025UK METAL GATE RF SILICON FET MECHANICAL DATA C 1 2 4 A 3 B GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W - 28V - 400MHz SINGLE ENDED FEATURES D E F * SIMPLIFIED AMPLIFIER DESIGN * SUITABLE FOR BROAD BAND APPLICATIONS DW PIN 1 PIN 3 DRAIN GATE PIN 2 PIN 4 SOURCE SOURCE G H * LOW Crss * SIMPLE BIAS CIRCUITS * LOW NOISE * HIGH GAIN - 13 dB MINIMUM DIM A B C D E F G H mm 26.16 5.72 45 7.11 0.13 1.52 0.43 7.67 Tol. 0.38 0.13 5 0.13 0.03 0.13 0.20 REF Inches 1.030 0.225 45 0.280 0.005 0.055 0.060 0.120 Tol. 0.015 0.005 5 0.005 0.001 0.005 0.008 REF APPLICATIONS * VHF/UHF COMMUNICATIONS from DC to 1GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 17.5W 65V 20V 1A -65 to 150C 200C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5855 Issue 1 D2025UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS Ciss Coss Crss Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 2.5W VDS = 28V f = 400MHz VDS = 28V VDS = 28V VDS = 28V VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.1A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.2A 1 0.18 13 40 20:1 65 Typ. Max. Unit V 1 1 7 mA A V S dB % -- 12 6 0.5 pF pF pF VGS(th) Gate Threshold Voltage* VSWR Load Mismatch Tolerance * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 10C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5855 Issue 1 |
Price & Availability of D2025UK
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |